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| 6MBI75UC-120 IGBT Module U-Series Features * High speed switching * Voltage drive * Low inductance module structure 1200V / 75A 6 in one-package Applications * Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply * Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso Conditions Rating 1200 20 100 75 200 150 75 150 390 +150 -40 to +125 2500 3.5 Unit V V A Continuous Tc=25C Tc=80C 1ms Tc=25C Tc=80C Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 Screw Torque Mounting *2 1 device W C VAC N*m AC:1min. *1 : All terminals should be connected together when isolation test will be done. *2 : Recommendable value : 2.5 to 3.5 N*m(M5) Electrical characteristics (at Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Symbols ICES IGES VGE(th) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (chip) trr R lead R shunt Conditions VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=75mA VGE=15V, IC=75A Tj=25C Tj=125C VCE=10V, VGE=0V, f=1MHz VCC=600V IC=75A VGE=15V RG=9.1 Tj=25C Tj=125C IF=75A IF=75A Without shunt resistance Resistance of R1,R2,R3 *4 VGE=0V Characteristics Min. Typ. - - - - 4.5 6.5 - 1.75 - 2.00 - 8 - 0.36 - 0.21 - 0.03 - 0.37 - 0.07 - 1.60 - 1.70 - - - 5.7 - 2.4 Unit Max. 1.0 200 8.5 2.10 - - 1.20 0.60 - 1.00 0.30 1.90 - 0.35 - - mA nA V V nF s Turn-off time Forward on voltage Reverse recovery time Lead resistance, terminal-chip*3 Shunt resistance V s m *3: Biggest internal terminal resistance among arm. *4: R1, R2,R3 is shown in equivalent circuit (p5) Thermal resistance characteristics Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*5 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. - - - - - 0.05 Unit Max. 0.32 0.49 - C/W C/W C/W *5 : This is the value which is defined mounting on the additional cooling fin with thermal compound. 6MBI75UC-120 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip 200 200 IGBT Module Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C / chip 150 Collector current : Ic [A] VGE=20V 15V 12V Collector current : Ic [A] 150 VGE=20V 15V 12V 100 100 10V 10V 50 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 50 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 200 10 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip T j=25C 150 Collector current : Ic [A] T j=125C Collector - Emitter voltage : VCE [ V ] 8 6 100 4 Ic=150A Ic=75A Ic=37.5A 50 2 0 0 1 2 3 4 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1M Hz, Tj= 25C 100.0 Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Dynamic Gate charge (typ.) Vcc=600V, Ic=75A, Tj= 25C Capacitance : Cies, Coes, Cres [ nF ] Cies 10.0 VGE Cres 1.0 Coes VCE 0 0 100 200 300 400 0.1 0 10 20 30 Collector-Emitter voltage : VCE [V] Gate charge : Qg [ nC ] 6MBI75UC-120 Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=9.1, Tj= 25C 10000 10000 IGBT Module Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=9.1, Tj=125C Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 1000 ton toff tr 100 tf 1000 toff ton tr 100 tf 10 0 50 100 150 Collector current : Ic [ A ] 10 0 50 100 150 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=75A, VGE=15V, Tj= 25C 10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 15 Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=9.1 Eoff(125C) Switching time : ton, tr, toff, tf [ nsec ] ton toff 1000 Eon(125C) 10 Eoff(25C) Eon(25C) tr 100 tf 5 Err(125C) Err(25C) 0 10 1 10 100 1000 0 50 100 150 Gate resistance : Rg [ ] Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=75A, VGE=15V, Tj= 125C 70 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 60 50 40 30 20 10 Err 0 1 10 100 1000 0 0 200 Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 9.1 ,Tj <= 125C Eon Collector current : Ic [ A ] 150 100 Eoff 50 250 500 750 1000 1250 Gate resistance : Rg [ ] Collector - Emitter voltage : VCE [ V ] 6MBI75UC-120 Forward current vs. Forward on voltage (typ.) chip 200 1000 IGBT Module Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, Rg=9.1 Forward current : IF [ A ] 150 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] T j=25C 100 T j=125C trr (125C) trr (25C) 100 Irr (125C) Irr (25C) 50 0 0 1 2 3 4 Forward on voltage : VF [ V ] 10 0 50 100 150 Forward current : IF [ A ] Transient thermal resistance (max.) 10.000 Thermal resistanse : Rth(j-c) [ C/W ] 1.000 FWD IGBT 0.100 0.010 0.001 0.001 0.010 0.100 1.000 Pulse width : Pw [ sec ] 6MBI75UC-120 Outline Drawings, mm M632 IGBT Module ( ) shows reference dimension. Equivalent Circuit Schematic 31,32 1 2 27 28 5 6 U 29,30 7 8 21 22 9 10 V 23,24 11 12 17 18 15,16 R1 3 4 33,34 R2 R3 W 19,20 13,14 |
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